toimub neljapäeval, 12. detsembril 2013. a. algusega kell 10.15 TÜ Füüsika Instituudi saalis, Riia 142, ruum 108
Ettekanne : Dr. Frédérique Ducroquet
IMEP-LAHC, IMEP, Grenoble INP - Minatec, Grenoble, FRANCE
High- k dielectrics and Si nanoelectronic devices activities at IMEP-LAHC, Minatec-Grenoble.
Pushing the scaling of metal-oxide-semiconductor (MOS) transistors to its ultimate limits is facing with the challenging "power consumption/ perfor-mance" trade-off. This requires for the next device generations, the intri-duction of new architectures (FinFET, SOI, multigates, nanowires…), new materials (high mobility channel, high- dielectrics…) and new fabrication processes (strain, ultra-thin films…). In addition, new hierarchy of physical phenomena (quantum effects, sensitivity to surface and interface, mechanical properties…) take place at this scale which can be useful to increase the functionalities of integrated circuits and to explore the interfaces with new disciplinary fields.
After having given an overview of our activities in this area, we will discuss on the electrical quality of the gate oxide/channel interface as one of the main challenges to optimize the device performance. In particular, we will show that the admittance spectroscopy is a powerful technique for the characterization of the interface states properties. Examples will be given for rare-earth oxide (GdSiO, LaLuO3) and HfO2-based thin film MOS structures.
The second part of the presentation will be focussed on energy activities. We will describe some characterization results obtained in the field of Li-based micro-batteries and of CdTe/ZnO nanowires and high conversion efficiency materials solar cells.